Navitas adds to ultra high voltage SiC portfolio
Navitas Semiconductor is announcing the sample availability of its new 3300V and 2300V ultra-high voltage (UHV) products in power module, discrete and known good die (KGD) formats.
According to the company, these SiC products set a benchmark for reliability and performance in ultra-high voltage power electronics, and are a significant step in its roadmap to 10 kV SiC solutions.
"Navitas’ new 3300V and 2300V SiC product portfolio allows our customers to push the boundaries of efficiency and reliability in solid-state transformers for AI data centres, as well as utility-scale battery energy storage and renewable energy to define a new standard for such mission-critical system applications,” said Paul Wheeler, VP and GM of SiC business unit.
These UHV devices are based on Navitas’ fourth-generation GeneSiC platform which uses a Trench-Assisted Planar (TAP) architecture to implement a multi-step e-field management profile that significantly reduces voltage stress and improves voltage blocking capabilities compared with trench and traditional-planar SiC MOSFETs.
According to the company, the TAP architecture is able to provide increased long-term reliability and avalanche robustness. In addition, the technology features an optimal source contact for superior cell-pitch density and enhanced current-spreading, which results in improved switching figures of merit and lower on-resistance at hot temperatures.
For high-power density and high-reliability systems, these products are integrated into an advanced SiCPAK G+ power module package, offered in half-bridge and full-bridge circuit configurations.
The SiCPAK G+ power modules feature a special epoxy-resin potting technology, which delivers over 60 percent improvement in power cycling lifetime and over 10x improvement in thermal shock reliability over similar silicone-gel potted power module technology.
Key features of the SiCPAK G+ power modules also include an AlN DBC substrate for superior heat dissipation and new high-current press-fit pins that double the current-carrying capability per pin. Discrete SiC MOSFETs are available in the industry standard TO-247 and TO-263-7 packages.
Navitas has also created also an enhanced reliability qualification benchmark, AEC-Plus, indicating its SiC products are qualified above and beyond the existing AEC-Q101 and JEDEC product qualification standards.
Additions to existing AEC-Q101 requirements include dynamic reverse bias (DRB) and dynamic gate switching (DGS). Also over 3x longer duration for static high-temperature, high-voltage tests (HTRB, HTGB, HTGB-R). Other new features are HV-THB qualification for power modules and HV-H3TRB qualification for discrete and KGD; and longer power cycling and temperature cycling.
