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News

News

Thursday 24th March 2022

Advanced Electrothermal models from Nexperia

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Wednesday 23rd March 2022

Transphorm FETs Power Boco Crypto Mining Power Supply

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Wednesday 23rd March 2022

GaN & SiC power semiconductors: Why these devices are gaining popularity

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Tuesday 22nd March 2022

Innoscience unveils GaN-based 140W power supply

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Tuesday 22nd March 2022

Rohm starts to produce 150V GaN HEMTs

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Tuesday 22nd March 2022

Power Integrations Unveils PFC chip with 750V GaN Switch

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Tuesday 22nd March 2022

Hitachi and NXP work together on SiC modules

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Monday 21st March 2022

Microchip Unveils 3.3 kV SiC Power Devices

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Monday 21st March 2022

Infineon announces optimised 650V CoolSiC MOSFETs

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Monday 21st March 2022

Cambridge GaN Devices debuts latest products at APEC

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Thursday 17th March 2022

German AlScN project hopes to halve 5G energy losses

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Wednesday 16th March 2022

6,400V GaN diode can protect the grid from EMPs

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Wednesday 16th March 2022

EPC Releases Lowest On-Resistance Rad Hard GaN FET

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Wednesday 16th March 2022

Transphorm and TDK-Lambda expand GaN Module Family

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Friday 11th March 2022

Soitec to expand manufacturing footprint

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Wednesday 9th March 2022

Lucid Air EV Charging Powered By Rohm

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Wednesday 9th March 2022

II-VI Accelerates Investment in SiC

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Wednesday 9th March 2022

Infineon at APEC 2022

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Wednesday 9th March 2022

EPC and Analog Devices collaborate on DC-DC Converters

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Tuesday 8th March 2022

Fluke celebrates engineering innovation on World Engineering Day

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Thursday 3rd March 2022

Teledyne HiRel Space-Screened 650V, 60A GaN HEMT

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Thursday 3rd March 2022

Nexperia to demo power innovations at APEC 2022

News

Tuesday 1st March 2022

Innoscience at APEC 2022

News

Tuesday 1st March 2022

Scientists deposit gallium oxide on 6-inch wafer using HVPE