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Technical Insights
Wednesday 13th December 2023
GaN: A natural playing field for innovation
Monday 11th December 2023
The road to SiC process control
Tuesday 5th December 2023
Strengthening the case for Plasma Polish
Monday 4th December 2023
Giving gallium oxide avalanche capability
Wednesday 13th September 2023
A new generation of physics-based tools steps into the WBG space
Wednesday 13th September 2023
Unleashing GaN’s full ability for high-speed switching
Monday 14th August 2023
A superior process for the SiC superjunction
Monday 14th August 2023
Banishing barriers to GaN adoption
Wednesday 7th June 2023
Getting strategic with SiC
Wednesday 31st May 2023
Soft-switching becomes a reality for EV drivetrains
Tuesday 30th May 2023
Using GaN HEMTs for high performance in USB-C designs
Wednesday 24th May 2023
Enhancing the ferroelectric gate HEMT
Tuesday 23rd May 2023
CS International: Championing a true heavyweight: Unleashing the promise of Ga₂O₃
Friday 28th April 2023
International Reliability Physics Symposium: Superior testing of SiC
Wednesday 19th April 2023
Targeting the C-band with ultra-high-voltage HEMTs
Wednesday 19th April 2023
Now’s the time to commercialise the GaN IC
Wednesday 19th April 2023
Driving motors in space
Wednesday 19th April 2023
Multi-dimensional power devices
Wednesday 19th April 2023
Controlling threshold voltage instabilities in SiC MOSFETs
Wednesday 19th April 2023
GaN diodes with uniform, robust avalanche
Thursday 6th April 2023
GaN diodes with uniform, robust avalanche
Thursday 6th April 2023
Bidirectional GaN switches are disrupting power management
Wednesday 29th March 2023
Virtualisation: a key enabler of the future power grid
Friday 20th January 2023
Unconventional electroplating techniques can improve performance
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