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Lab News

News

Thursday 3rd July 2025

Understanding the impact of radiation on SiC devices for space

News

Monday 30th June 2025

A GaN-on-silicon foundation for Ga₂O₃ FETs

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Tuesday 17th June 2025

Vertical GaN diode shows resistance to proton irradiation

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Thursday 12th June 2025

Debut for vertical rutile GeO₂ Schottky barrier diode

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Tuesday 27th May 2025

Refining diamond film fabrication

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Thursday 15th May 2025

Pulsed MOCVD improves n-type AlN

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Monday 28th April 2025

NCT achieves record Ga₂O₃ performance

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Thursday 24th April 2025

Scientists identify new material for wearable devices

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Monday 14th April 2025

'Fuse' for the future Grid

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Tuesday 1st April 2025

WHU-USTC team demo novel GaN chip temperature monitoring

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Tuesday 25th March 2025

Boosting the blocking voltage of birectional HEMTs

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Tuesday 18th March 2025

NREL team advances substrate engineering

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Monday 3rd March 2025

High inversion channel mobility in 1.4 kV vertical GaN MIS-FET

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Wednesday 19th February 2025

Korean team develops method to evaluate SiC chips for space

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Monday 10th February 2025

A debut for the native AlN transistor

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Monday 3rd February 2025

SiC MOSFETs: Understanding the benefits of plasma nitridation

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Thursday 30th January 2025

UK team leads diamond-FET breakthrough

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Wednesday 22nd January 2025

Transforming the current density of AlN Schottky barrier diodes

News

Wednesday 22nd January 2025

Turbocharging the GaN MOSFET with a HfO₂ gate

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Wednesday 15th January 2025

Boosting AlN-on-AlN Schottky barrier diode performance

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Wednesday 8th January 2025

Na‑flux method improves GaN device performance

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Tuesday 17th December 2024

Vertical GaN diode offers superior surge current capability

News

Wednesday 23rd October 2024

US team develop new thermal interface material

News

Tuesday 10th September 2024

Enhancing mobility with mist CVD

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