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Tuesday 12th December 2023
Purdue University wins SiC patent lawsuit against ST
Tuesday 12th December 2023
Innoscience launches low voltage GaN HEMT family
Monday 11th December 2023
Navitas powers NIO Phone
Monday 11th December 2023
Nexperia offers GaN FETs in compact SMD packaging
Monday 11th December 2023
Rohm and Toshiba to collaborate on power devices
Thursday 7th December 2023
Infineon introduces new synchronous buck regulators
Thursday 7th December 2023
Flex Power launches 16-160V DC-DCs
Wednesday 6th December 2023
Renesas driver family enables torque at zero speed
Wednesday 6th December 2023
Rohm adds SiC and IGBT models to SPICE library
Tuesday 5th December 2023
Wolfspeed completes sale of RF business to Macom
Tuesday 5th December 2023
TI expands low-power GaN portfolio
Tuesday 5th December 2023
EET uses EPC GaN FET in balcony solar product
Tuesday 5th December 2023
Coherent’s SiC business completes $1B investment
Tuesday 5th December 2023
ST extends MasterGaN performance
Tuesday 5th December 2023
Change of CEO at Clas-SiC fab
Monday 4th December 2023
Transphorm releases new charger designs
Thursday 30th November 2023
Spirox and Southport announce SiC defect tool
Thursday 30th November 2023
Nexperia releases first SiC MOSFETs
Wednesday 29th November 2023
$1.2M NSF award to test power grid stability
Wednesday 29th November 2023
Infineon introduces 15V trench power MOSFETs in PQFN
Tuesday 28th November 2023
Diamond device has highest breakdown voltage
Thursday 23rd November 2023
EU project paves way for improved grid resilience
Wednesday 22nd November 2023
DOE announces $42M to update US power grid
Wednesday 22nd November 2023
New 650V CoolMOS option targets fast EV charging
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