Renesas to support 800V DC data centre architecture
Renesas Electronics has announced that it is supporting NVIDIA's 800V Direct Current power architecture, helping fuel the next wave of smarter, faster AI infrastructure with data centre power consumption scaling into the multi-hundred megawatt territory.
One solution is to use GaN FETs as they enable offer fast switching and low energy losses. Moreover, GaN power devices enable the development of 800V DC buses within racks to reduce distribution losses and the need for large bus bars, while still supporting reuse of 48V components via DC/DC step-down converters.
Renesas says that its GaN based power solutions are especially suited for the task, supporting efficient and dense DC/DC power conversion with operating voltages of 48V to as high as 400V, with the option to stack up to 800V.
Based on the LLC Direct Current Transformer (LLC DCX) topology, these converters achieve up to 98 percent efficiency. For the AC/DC front-end, Renesas uses bi-directional GaN switches to simplify rectifier designs and increase power density. Renesas REXFET MOSFETs, drivers and controllers complement the BOM of the new DC/DC converters. Visit renesas.com/power for more details.
“AI is transforming industries at an unprecedented pace, and the power infrastructure must evolve just as quickly to meet the explosive power demands,” said Zaher Baidas, SVP and general manager of Power at Renesas. “Renesas is helping power the future of AI with high-density energy solutions built for scale, supported by our full portfolio of GaN FETs, MOSFETs, controllers and drivers. These innovations will deliver performance and efficiency, with the scalability required for future growth.”
Renesas has published a white paper that explores the topology of its devices supporting 800V power distribution in AI infrastructure.
