PI details PowiGaN benefits for 800V DC
Power Integrations (PI) has outlined the benefits of its PowiGaN GaN technology for next-generation AI data centres.
The capabilities of 1250V and 1700V PowiGaN technology for 800V DC power architectures are explained in a white paper, published at the 2025 OCP Global Summit in San Jose, where NVIDIA provided an update on the 800 VDC architecture.
Power Integrations is collaborating with NVIDIA to accelerate the transition to 800V DC power and megawatt-scale racks.
“With rising AI power demands, moving to an 800 VDC input simplifies rack design, makes more efficient use of space and reduces copper usage,” said Roland Saint-Pierre, vice president of product development at Power Integrations. “With rising rack power demands, we see 1250V and 1700V PowiGaN devices as ideal choices for main and auxiliary power supplies, delivering the efficiency, reliability and power density required in 800 VDC data centres.”
The white paper details the advantages of the company's 1250V PowiGaN HEMTs in terms of reliability, power-density and efficiency requirements (>98 percent) for the 800 VDC architecture. The paper also demonstrates that a single 1250V PowiGaN switch delivers greater power density and efficiency compared to stacked 650 V GaN FETs and competing 1200 V SiC devices.
Also highlighted are InnoMux2-EP ICs for auxiliary power supplies in 800V DC data centres. The InnoMux-2 device’s integrated 1700V PowiGaN switch supports 1000V DC input voltage, while its SR ZVS operation provides greater than 90.3 percent of 12V system efficiency in a liquid-cooled, fan-less 800V DC architecture, according to PI.
