News Article
Navitas to develop 10kV SiC chips for US Government
ALATTIS program builds on Navitas' ultra-high-voltage SiC technology and domestic supply chain
GaN and SiC firm Navitas Semiconductor has been awarded the ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) program by the US Government to develop next-gen 10 kV SiC power semiconductor technology.
The ALATTIS prototype project, sponsored by the Army Research Laboratory (ARL), will develop, execute, and validate a novel and currently unavailable domestic manufacturing process for 10 kV SiC IGBTs. Navitas will use its patented trench-assisted planar (TAP) architecture, integrated with advanced PiN diode technologies.
“The ALATTIS award marks a significant milestone in advancing ultra-high-voltage SiC power devices and recognises Navitas' over 20 years of innovation in delivering reliable, ultra-high-voltage, high-power SiC technologies,” said Siddarth Sundaresan, SVP and CTO at Navitas.
ALATTIS is supported by the Joint Experimentation and Technology Accelerator (JETX) with the aim of advancing high-power electronics for critical defence and infrastructure applications.
