Mouser now offering Onsemi GaNEXUS GaN FETs
Distributor Mouser Electronics is now stocking GaNEXUS GaN FETs from Onsemi.
The devices are suitable for fast switching, low gate and output charge, plus enhanced efficiency for AI, data centres, industrial automation, robotics, and energy infrastructure applications.
The enhancement-mode discrete GaN HEMTs offer a voltage range of 40 to 650 V, including 650 V GaNEXUS Smart GaN FETs with integrated protection to improve reliability and simplify system integration.
In low- and medium-voltage systems, including AI servers, 48 V intermediate bus converters (IBCs), battery backup units (BBUs), and motor drives, GaNEXUS enables smaller magnetics, higher power density, improved efficiency, better thermal performance, improved control stability, and reduced switching losses.
In higher voltage applications, such as AI power shelves, high-voltage DC-DC conversion, PFC, and LLC power stages, GaNEXUS enables up to 60 percent reduction in magnetics size in high-frequency AC‑DC and resonant stages, higher power density in PFC, LLC, and HV DC‑DC architectures, and efficiency gains in thermal and operating costs.
