Wolfspeed expands 200mm SiC portfolio
Wolfspeed has announced the commercial availability of its new Premium 200 mm n-type SiC substrate, expanding its 200 mm SiC materials portfolio with a higher-quality starting material designed to improve yield through fewer defects and greater wafer-shape stability.
As the SiC industry pushes toward higher voltages and larger die sizes, material-level quality and wafer consistency have become critical differentiators. Wolfspeed says its Premium 200 mm n-type SiC substrate delivers a multi-metric leap in quality spanning defect density, micropipe count, and wafer shape stability.
“Wolfspeed leads in advancing SiC materials technology, and this latest addition to our 200 mm portfolio reflects our expertise behind those efforts,” said Cengiz Balkas, EVP, Materials Business Unit at Wolfspeed. “We’re giving customers a stronger foundation for developing increasingly demanding SiC devices, backed by the manufacturing experience and scale to support them as needs grow.”
Wolfspeed’s Premium 200 mm n-type SiC substrate delivers fewer than 0.01 micropipes per square centimetre, or fewer than three micropipes per wafer, as validated by X-ray topography using the industry-standard method, as well as low threading screw dislocations. Combined with Wolfspeed’s wafer-shape and lot-to-lot consistency, the higher bare-wafer quality translates directly into better epitaxial performance achieved entirely within customers’ existing epitaxy processes, according to the company.
The product is orderable today, with dedicated capacity and a product expansion roadmap. Wolfspeed says it will quickly ramp new capacity as market demand grows within the company’s established large-scale SiC manufacturing facility.
