Infineon announces world’s first 300-mm power SiC wafer
Infineon Technologies has successfully processed 300-mm SiC wafers into functional power devices at its fab in Villach, Austria.
It claims to be the first company to pioneer this innovation milestone in a full-scale semiconductor fab environment. It was realised by using existing silicon manufacturing equipment.
The company will show the public the world's first processed 300-mm SiC wafer at the electronica trade show in Munich from 10 to 13 November 2026.
Jochen Hanebeck (pictured above), CEO of Infineon, said: “Leadership in power semiconductors means continuously pushing technology to the next level. With silicon, GaN and now SiC 300-mm wafers, we are in a leading position to scale semiconductor manufacturing and drive profitable growth.”
Infineon says it will plan the 300-mm SiC technology and ramp timing in close collaboration with its customers and partners, while further executing on its 200-millimeter SiC manufacturing roadmap. Advanced SiC power technology provides Infineon customers with a cost-effective and secure supply base for automotive, renewable energy, industrial and AI data centre applications.
In parallel, Infineon has also successfully proofed the feasibility of its Cold Split technology with 300-mm SiC at its Dresden, Germany, site. Cold Split separates wafers from a SiC boule with less material loss and substantially reduced processing time than conventional wire sawing, so more wafers can be obtained from the same crystal with compared to less capital expenditure.
