Nexperia expands GaN portfolio
Nexperia has announced new ultra-low-ohmic GaN FETs, expanding its low- and medium-voltage GaN portfolio with devices spanning 18 V to 200 V.
Designed to address power design challenges in AI data centres, humanoid robotics, battery-powered tools, renewable energy, high-efficiency SR and DC-DC conversion, the devices combine high current capability, fast switching performance and compact thermally enhanced packages to support increased efficiency and power density across a broad range of applications.
The family is said to achieve record-low on-state resistance, with sub-milliohm RDS(on) in a PCB footprint of 10 mm².
In high-density DC-DC power conversion, the medium-voltage 100 V to 200 V portfolio addresses both primary-side and secondary-side power stages in isolated topologies, as well as non-isolated step-down converters. These devices are suited for half-bridge and full-bridge LLC resonant converters, while also enabling efficient synchronous rectification in 48 V power-delivery architectures increasingly used in AI infrastructure.
The low-voltage 18 V to 40 V devices are optimised for secondary-side synchronous rectification and low-voltage power-distribution stages, enabling efficient conversion from 12 V rails down to sub-1 V processor core voltages.
The flagship product in the series, the GANE0R8-100QTM, a 100 V GaN FET featuring a typical RDS(on) of just 0.75 mΩ in a compact 3 mm × 5 mm PQFN package, is available now alongside five additional portfolio members spanning 25 V to 200 V and offering RDS(on) values down to 0.37 mΩ.
Two further devices, including the 18 V GANE0R3-015QTL with a typical RDS(on) of 0.32 mΩ, are scheduled for release in Q1 2027, completing a portfolio of eight products spanning 18 V to 200 V. The family ranges from a 18 V device in a 3.3 mm × 3.3 mm PQFN package to a 200 V device in a 3 mm × 5 mm PQFN package, with both package options incorporating an exposed pad designed to support top-side cooling and improved thermal performance.
