Onsemi reveals vertical GaN-on-GaN semiconductors
Onsemi has introduced vertical GaN-on-GaN power semiconductors, which it says set a new benchmark for power density, efficiency and ruggedness for AI data centres, electric vehicles, and other energy intensive applications.
Dinesh Ramanathan, SVP of corporate strategy, Onsemi said: “Vertical GaN is a game-changer for the industry and cements Onsemi’s leadership in energy efficiency and innovation.”
By conducting current vertically, the new vGaN power semiconductors can handle high voltages of 1,200V and above in a monolithic die, switching high currents at high frequency with superior efficiency to deliver smaller and lighter systems.
The technology, developed by Onsemi’s Syracuse, New York, R&D team, can cut losses in high end power systems by almost 50 percent, according to the company. By operating at higher frequencies, it can also reduce the size, including passives like capacitors and inductors by a similar amount. Compared to commercially available lateral GaN, vGaN devices are approximately three times smaller.
The company is sampling both 700V and 1,200V devices to early access customers.
