VIDEO
Mind the ultra-wide bandgap – gearing up for Gallium Oxide
Video Summary

Guido Ueberreiter, Vice President Semiconductor Strategy, VON ARDENNE, explains why Gallium Oxide (Ga₂O₃) is attracting strong interest as an ultra-wide bandgap (UWBG) semiconductor with the potential to redefine power electronics beyond the limits of SiC and GaN. A key aspect of Ga₂O₃ that’s of great interest is its substrate growth scalability. Unlike SiC or GaN, Ga₂O₃ single crystals can be produced by relatively low-cost melt growth methods, compatible with large wafer sizes, and this enables lower substrate costs and simpler manufacturing approaches (PVD thin-film growth techniques). However, Ga₂O₃ also exhibits lower thermal conductivity than SiC or GaN, which poses challenges for thermal management in high power devices, a focus of ongoing R&D right now.