ST adds 700V GaN devices for high-demand applications
Seven new GaN-based power semiconductors from STMicroelectronics are designed to improve efficiency and increase power density in high-demand applications inclduing AI servers, robotics, industrial systems and advanced home appliances.
“Broadening our PowerGaN portfolio with new 700V devices extends the benefits of GaN technology into medium-power and high-power applications,” said Mario Aleo, executive VP, Power & Discrete Sub-Group, STMicroelectronics.
The new PowerGaN enhancement-mode transistors (HEMTs) joining ST’s 700V PowerGaN series cover a wide range of continuous current ratings, from 6 A to 29 A, and typical RDS(on) from 53 mΩ to 270 mΩ. Also featuring ultra-low internal capacitances and low gate charge, inherent in GaN wide-bandgap technology, each has a Qg x RDS(on) figure of merit (FoM) significantly ahead of traditional silicon devices.
According to ST, te devices can drop into power‑conversion circuits as a replacement for MOSFETs, or enable new, higher‑frequency topologies. Their capability to operate at elevated switching frequencies reduces the size of magnetics and passives, enabling a more compact power stage and higher power density.
The devices are housed in DPAK, TO-LL, and PowerFLAT surface-mount packages that are proven in practice and widely supported by major electronic design automation libraries and toolchains. The TO-LL and PowerFLAT devices provide a Kelvin source connection that separates the gate-control circuit from the main power path to maximize noise immunity, protect the gate driver, and preserve timing margin.
