Fraunhofer IAF to show GaN4EmoBil module at PCIM
Fraunhofer Institute for Applied Solid State Physics IAF will show a demo of a GaN-based power electronics module for 800 V bidirectional direct current (DC) charging systems, at PCIM Expo & Conference from June 9 to 11, 2026, in Nuremberg.
The module is part of the GaN4EmoBiL project (GaN Power Semiconductors for Electric Mobility and System Integration via Bidirectional Charging) funded by the Federal Ministry for Economic Affairs and Energy (BMWE).
Project partner Ambibox GmbH integrated the module into the demonstrator of a bidirectional, single-phase off-board charger for EVs.
The Fraunhofer IAF module uses 1200 V GaN devices fabricated on an insulating substrate. The superior properties of the devices are to be evaluated through their use in the demonstrator with battery voltages ranging from 150 V to a maximum of 920 V.
“The single-phase demonstrator of an off-board EV charger with up to 3 kW of bidirectional power addresses an existing gap in the trade-off between cost, flexibility, efficiency, and compactness for bidirectional charging,” explains Stefan Mönch, coordinator of the GaN4EmoBiL project.
Currently, electric vehicles are equipped with permanently installed on-board chargers to convert the alternating current (AC) from a household outlet or public charging station into the direct current (DC) required by the electric car, for example, at a power level of 11 or 22 kW for fast charging.
However, on-board chargers incur high costs due to their size, weight, and technical complexity. The off-board charger developed in GaN4EmoBiL represents a significantly more affordable and flexible alternative: Although its 3 kW power output results in a slower charging speed compared to on-board charging systems, it is mobile, much more compact, lighter, and versatile thanks to its CCS (Combined Charging System) plug and Schuko plug. The demonstrator has a total volume of 8.3 litres and a total weight (including plugs) of 5.7 kg.
Another advantage is its bidirectional charging capability. “Bidirectional charging at high reverse voltages, as enabled by the demonstrated GaN charging system, is a key pillar in making the energy system more flexible,” says Achim Lösch, business developer for High-Frequency and Power Electronics at Fraunhofer IAF. Through bidirectional charging, an electric car can function not only as a means of transportation but also as an energy storage device. During periods of oversupply, it draws power from the grid; during peak loads, it feeds power back into the grid.
“At Fraunhofer IAF, we are developing innovative GaN devices and integrated power circuits (GaN power ICs) that are not only efficient but also significantly advance miniaturidation at the system level through functional integration,” explains Michael Basler, researcher in the field of GaN power electronics at Fraunhofer IAF. “At the same time, we are advancing the scalability of these technologies in terms of voltage class, current carrying capacity, and wafer size. Our goal: wide-bandgap performance at silicon prices.”
As well as the bidirectional EV charging system demonstrator, Fraunhofer IAF will provide an overview of its R&D activities in the field of GaN power electronics at PCIM and four researchers from Fraunhofer IAF will present their current work in lectures and poster sessions.
Michael Basler will give the PCIM keynote June 9 at 9:45 a.m.: 'The GaN Evolution: Lateral, Vertical, and Bidirectional – What’s Next?' In it, Basler will provide an overview of the development of GaN transistors for power electronics to date, explain their advantages, and look ahead to upcoming innovations.
Richard Reiner will give two presentations. On June 9, he will compare two different concepts for GaN devices ('GaN-HEMTs vs. GaN-‘Bricks’'), and on June 10, Reiner will speak on the Technology Stage about 'Scaling Up the Power of GaN Technologies'. In addition, Reiner will participate in the panel discussion 'What’s up, What’s Next for GaN?' hosted by Bodo’s Power Systems on June 11.
Stefan Mönch will participate in the 'Advanced Power Devices' poster session on June 10. He will present his poster 'A 600 V Three-Phase Inverter as GaN Power Converter IC on Substrate Biasing-Free Isolating Substrate.'
Daniel Fugmann will present his poster 'The Influence of Field Plates on the Dynamic RON in GaN-Based Monolithic Bidirectional Switches' at the poster session 'GaN Devices and Driving', which will take place on June 10.
