Nexperia grows 650V GaN FET portfolio
Nexperia has announced an expanded portfolio of 650V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages.
The extended portfolio provides power engineers with greater flexibility to balance efficiency, thermal performance and power density across high-power applications, including datacenter and telecom power supplies, renewable energy systems, battery energy storage (BESS), and industrial drives and automation.
“The transition towards wide-bandgap power semiconductors is accelerating across industrial, energy and AI infrastructure applications,” said Andrea Bricconi, VP and head of Nexperia's GaN product group. “As efficiency, power density and thermal requirements continue to increase, we’re focused on making GaN more accessible and scalable for engineers designing high-power applications. Expanding our 650V GaN portfolio is an important step in that direction - and only the beginning of what we’re building in the wide-bandgap space”.
In high-power LLC stages typical of 10–12 kW AI server PSUs, the use of GaN devices enables ~0.8–1.2 percent efficiency improvement at full load compared to silicon, while supporting ~40–70 percent increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor drive, GaN devices can reduce inverter power losses by approximately 20–25 percent, enabling an efficiency improvement of ~1–1.5 percent while also supporting smaller thermal management solutions and higher overall system power density.
Built on Nexperia’s GaN technology platform, the devices combine fast switching characteristics, low switching losses, controlled dynamic behaviour, and robust thermal performance with a range of industry-standard package options. This enables optimisation of both electrical and mechanical design parameters while supporting straightforward integration into existing power system architectures.
The 35 mΩ and 70 mΩ devices are available now in TOLL, TOLT, TO-247-3, and TO-247-4 packages, with further 50 mΩ variants scheduled for Q3 2026.
