Nexperia brings QDPAK packaging to 1200V SiC MOSFETs
Nexperia has released 1200V SiC MOSFETs in QDPAK packaging with a top-side cooled surface-mount package optimised for high-power density and thermally demanding applications.
Designed for high-efficiency, high-voltage power conversion applications, these devices enable the electrical performance of Nexperia’s SiC technology with simplified thermal management and mechanical integration, enabling higher output power, increased efficiency and improved thermal performance in compact designs.
Available in both industrial-grade and automotive-qualified variants, the portfolio offers RDS(on) options of 17, 30, 40, 60 and 80 mΩ, delivering a scalable QDPAK platform for applications ranging from high-power systems to compact designs with demanding thermal and mechanical constraints.
QDPAK packaging addresses the problem of heat dissipation through the PCB. By enabling a direct die-to-heatsink thermal path from the top side of the package, these devices reduce reliance on the board as the primary heat-spreading path and allow the semiconductor and PCB thermal domains to be managed more independently.
Compared to conventional D2PAK-7 packaging, top-side cooled packages can deliver up to 3 kW higher output power at comparable thermal limits, while also providing around 40 °C additional thermal headroom at the same power level.
Building on the existing X.PAK platform, QDPAK further extends power handling capability, enabling operation at approximately 3 kW higher power at comparable case temperatures, while offering around 23 °C additional thermal headroom at similar power levels.
The devices are suitable for EV onboard chargers (OBC), high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters, uninterruptible power supplies (UPS), motor drives and datacenter power systems, QDPAK devices help engineers optimise both electrical and mechanical system performance.
