GE announces 4th generation SiC MOSFETs
GE Aerospace has announced its fourth generation of SiC power MOSFETs chips at the company’s research centre in Niskayuna, New York.
Available in a 5mm x 5 mm chip size, this latest generation of SiC power devices delivers 1200V and 11mΩ, with a temperature rating of 200°C.
As industries adopt advanced semiconductors for hybrid- and battery-electric vehicle (HEV and BEV) platforms, these power devices will deliver a step change in efficiency and power density, according to GE, which is actively exploring new collaborations in the automotive sector as well as data centre industry.
“Our newest Gen-4 SiC MOSFETs deliver a step change in performance that makes them very attractive across a wide range of industries, including automotive, renewables, AI data centres, and industrial electrical power,” said Kris Shepherd, president & GM, Electrical Power Systems for GE Aerospace. "These industries have an opportunity to realise significant gains in efficiency, reliability and power density across all these applications.”
GE Aerospace also sells SiC-enabled electric power generation, distribution and conversion solutions through it Electrical Power business to support aerospace, marine, and ground-based platforms.
