Toshiba adds new 600V MOSFETs in 4-pin TO-247-4L(X)
Toshiba Electronics Europe has launched six new products featuring the DTMOSVI 600V series of N-channel power MOSFET chips, mounted in a 4-pin TO-247-4L(X) package.
These TKxxxZ60Z1 devices are designed to reduce switching loss in demanding applications including servers in data centres, switched-mode power supplies (SMPS) for industrial equipment, and power conditioners for PV generators.
The DTMOSVI 600V series, featured in these new products, has been engineered with an optimised gate design and process. This optimisation has resulted in a reduction of the drain-source on-resistance (RDS(ON)) per unit area by approximately 13 percent, according to Toshiba.
Also the figure of merit (FOM) for MOSFET performance, RDS(ON) × gate-drain charge (Qgd), has been reduced by around 52 percent compared to Toshiba's previous generation DTMOSIV-H products with the same 600V VDS ratings. For example, the TK024Z60Z1 has a typical RDS(ON) of 20mΩ and Qgd of 37nC.
The four-pin TO-247-4L(X) package includes a dedicated signal source terminal for the gate drive to reduce the impact of switching due to the inductance of the source wire inside the package (a common issue in conventional three-pin packages).
This enhancement improves the switching speed and enhances high-speed switching performance. However, the TO-247-4L(X) package has a different appearance and dimensions compared to Toshiba’s existing four-pin TO-247-4L package, as it features the cavity between the drain and source pins to increase creepage distance.
