Mitsubishi adds to high-voltage IGBT range
Mitsubishi Electric launching new standard-isolation (6.0kVrms) and high-isolation (10.2kVrms) modules in its 4.5kV/1,200A XB Series of high-voltage HVIGBTs .
These new high-capacity power semiconductors achieve high moisture resistance for more efficient and reliable inverters used in large industrial equipment, such as railcars, operating in diverse environments including outdoors.
Mitsubishi Electric will exhibit the new modules at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, 2026, as well as other exhibitions in North America, Europe, China, India and additional locations.
The new modules use IGBT elements that incorporate Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structure.
New structures for electric field relaxation and surface charge control enabled Mitsubishi Electric to reduce the chip’s termination region size by about 30 percent while also achieving about 20 times greater moisture resistance than existing products.
In addition, the module reduces total switching loss by approximately 5% compared to previous models, and reverse-recovery safe-operating area (RRSOA) tolerance is about 2.5 times greater than that of compared to previous models.
