KnowMade GaN patent monitor shows surging innovation
KnowMade has released its Q3 2025 GaN Patent Monitor, providing an in-depth analysis of global intellectual property (IP) activity in the GaN industry.
The Q3 2025 patent landscape confirms GaN’s accelerating industrial expansion. During the quarter, 599 new patent families were published, maintaining a high innovation pace. Notably, 70 percent of these inventions originated from Chinese players, demonstrating China’s continued drive to lead GaN development.
A detailed application-based breakdown reveals strong momentum in power electronics. 376 new patent families targeted power applications, significantly outpacing RF technologies; 107 patent families focused on RF applications; and over 110 patent families addressed multiple application fields, reflecting the transversal relevance of GaN materials and devices.
This sustained IP flow illustrates a robust interest in GaN technologies across energy efficiency, fast-charging systems, EV powertrains, telecom infrastructure, and high-frequency components, all central drivers of Q3 2025 GaN innovation.
Newcomers joining the GaN IP landscape
Q3 2025 saw a high number of IP newcomers filing their first GaN-electronics-related patents, most of them being Chinese companies. Several notable non-Chinese new entrants introduced meaningful contributions:
Alpsemi (France) disclosed a high-voltage HEMT epitaxial structure dedicated to advanced power conversion. SK Foundry introduced a GaN transistor structure designed to mitigate current collapse, improving device reliability. Atomera (USA) unveiled a superlattice structure enabling enhanced stress and strain control in GaN-on-Si epitaxy while facilitating self-separation from the growth substrate — a key manufacturing advantage.
A highlight of Q3 2025 GaN innovation is a prominent US-based academic-military collaboration between the University of California, University of Maryland, University of Virginia, and the US Navy. The partners introduced carbide 'phonon bridge layers' engineered to reduce thermal boundary resistance between an integrated diamond heat spreader and an AlGaN HEMT. This development could unlock dramatic improvements in GaN device thermal management, according to KnowMade's report.
Strengthening IP positions among established players
Q3 2025 also recorded 426 patent families being granted for the first time, confirming the competitive consolidation of the GaN ecosystem. Over 230 newly granted families concerned power applications, versus 90 for RF. Around 100 newly granted families covered multi-application inventions.
Among power GaN market players, Infineon stands out as the quarter’s strongest GaN IP performer, securing 15 newly granted patent families, well ahead of Innoscience (seven) and Rohm (three). Infineon’s newly granted patents span GaN transistors, manufacturing methods, low-inductance packaging, power ICs, and DC/DC converter-based systems.
Major foundries also reinforced their IP position with UMC obtaining eight granted patents while TSMC and GlobalFoundries each strengthened their IP portfolios with three additional granted patent families.
KnowMade says this competitive dynamic underscores a rapidly maturing industry in which both integrated device manufacturers (IDMs) and foundries are investing heavily in foundational GaN technologies.
