Dynex adds advanced 450A, 650V GaN power module
UK-based Dynex Semiconductor has announced the development of a new 450A, 650V GaN half-bridge power module, designed to deliver ultra-fast switching high efficiency and enhanced thermal management for demanding power conversion applications.
The new module combines advanced semiconductor technology with innovative packaging to maximise performance for EV power systems, renewable energy inverters, energy storage systems, data centre power supplies, fast charging infrastructure and more.
Key features include 450A continuous current capability; 650V blocking voltage; half-bridge inverter configuration; planar PCB embedding technology; double-sided cooling architecture; and ultra-low commutation loop inductance below 1nH.
Dynex says that the module's planar PCB embedding technology minimises parasitic inductance within the power loop, enabling exceptionally fast and stable switching performance.
The flexibility of the embedding process also allows close matching and balancing of parallel GaN devices, helping to achieve consistent switching behaviour across the module.
To support high-power operation, the module's double-sided cooled planar package structure reduces thermal resistance between the semiconductor junction and cooling system, allowing higher power densities while maintaining reliable operating temperatures.
Dynex says that the combination of low electrical parasitics and advanced thermal performance enables the module to operate efficiently in demanding environments where both power density and reliability are critical.
